Characteristics 1000 GB M.2 NVMe Storage Samsung 9100 PRO [MZ-VAP1T0BW]
General parameters
Type
SSD M.2 drive
Model
Samsung 9100 PRO
Manufacturer Code
[MZ-VAP1T0BW]
Basic characteristics
Storage Capacity
1000 GB
Form Factor
2280
Physical Interface
PCIe 5.0 x4
M.2 Socket Key
M
NVMe
yes
Drive Configuration
Bits Per Cell
3-bit TLC
Memory Structure
3D NAND
DRAM cache
yes
DRAM Cache Size
1024 MB
Speed Indicators
Max Sequential Read Speed
14700 MB/s
Max Sequential Read Speed
13300 MB/s
Random 4KB Read (QD32)
1850000 IOPS
Random 4KB Write (QD32)
2600000 IOPS
Reliability
SSD Longevity (TBW)
600 TB
DWPD
0.33
Additional Information
Radiator
none
Energy Consumption
7.6 W
Features, Additional
MTBF (mean time between failures) up to 1,500,000 hours, compatible with PlayStation 5
Dimensions
Length
80.15 mm
Width
22.15 mm
Thickness
2.38 mm
Description
The 1000 GB Samsung 9100 PRO [MZ-VAP1T0BW] M.2 NVMe SSD is designed for equipping graphics workstations, powerful gaming PCs, and other high-performance systems. The model conforms to the most common form factor, 2280. Measuring 80.15x22.15x2.38 mm, the drive is compatible with PlayStation 5 consoles, many laptops, and almost any desktop motherboard. Data exchange is handled via the high-speed PCIe 5.0 x4 interface. A 1024 MB DRAM buffer accelerates most read and write operations. Thanks to a controller based on a 5 nm process technology, the drive features enhanced energy efficiency. The reliability of the device is reflected by an MTBF of 1.5 million hours.
The maximum sequential read speed of the Samsung 9100 PRO [MZ-VAP1T0BW] drive is 14,700 MB/s. The model's write performance reaches up to 13,300 MB/s. The high-speed parameters of the device minimize execution time for file operations in games, any software, and operating systems.
The maximum endurance rating of the drive is 600 TBW. The device is suitable for frequent software updates and regular data backups.