RAM ADATA XPG Lancer Blade [AX5U6400C3216G-SLABBK] 16 GB

#5433284

RAM ADATA XPG Lancer Blade [AX5U6400C3216G-SLABBK] 16 GB

[DDR5, 16 GBx1 pcs, 6400 MHz, 32(CL)-39-39] details

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  • Characteristics
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  • Service rating (Reliability assessment)

Characteristics RAM ADATA XPG Lancer Blade [AX5U6400C3216G-SLABBK] 16 GB

General parameters

Type
RAM
Model
ADATA XPG Lancer Blade
Manufacturer Code
[AX5U6400C3216G-SLABBK]

Kit volume and contents

Memory Type
DDR5
Memory Module Type
UDIMM
Total Memory Capacity of the Entire Set
16 GB
Single Memory Module Capacity
16 GB
Number of Modules Included
1 pcs
Registered Memory
none
ECC Memory
none

Performance

Clock Frequency
6400 MHz
AMD EXPO Profiles
6400 MHz (32-39-39)
Intel XMP Profiles
6400 MHz (32-39-39)

Timings

CAS Latency (CL)
32
RAS to CAS Delay (tRCD)
39
Row Precharge Delay (tRP)
39

Design

Heatsink Present
yes
Radiator Color
black
Backlit Board Elements
none
Height
33.8 mm
Low Profile
none

Additional Information

Power Supply Voltage
1.4 V
Features, Additional
On-Die ECC

Description

The ADATA XPG Lancer Blade [AX5U6400C3216G-SLABBK] RAM has a capacity of 16 GB. The device corresponds to the DDR5 type. The memory is intended for equipping high-performance gaming computers. The model's responsiveness in video games is enhanced by AMD EXPO and XMP 3.0 overclocking technologies. The memory clock speed is 6400 MHz. The module timings are 32-39-39. The minimum operating frequency is 4800 MHz.
ADATA XPG Lancer Blade [AX5U6400C3216G-SLABBK] RAM is suitable for assembling and upgrading high-performance versatile office and home PCs. The device's bandwidth is sufficient for the productive use of any operating systems and programs. The model supports On-Die ECC error correction technology. It improves system stability by minimizing software crashes. The module's operating temperature range is from 0 to 85 °C.
The memory supply voltage is increased to 1.4 V. Device power consumption is optimized by Power Management IC technology. A low-profile heatsink prevents module overheating under any workloads. It increases the memory height to 33.8 mm.